2SA1797T100Q PNP power transistor rated for 50V collector-emitter breakdown and 3A DC collector current. Features low saturation voltage and high gain.
Mfr Part #:

2SA1797T100Q

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP power transistor rated for 50V collector-emitter breakdown and 3A DC collector current. Features low saturation voltage and high gain.
Total Stock: 13,000 pcs
$ Price Range: $0.23 - $1.05

2SA1797T100Q Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 07+ On Request On Request

2SA1797T100Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Collector Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (Minimum @ VCE=-2 V, IC=-0.5 A)
DC Current Gain (Minimum @ VCE=-2 V, IC=-1.5 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Frequency
Mounting Type
Operating Temperature
Output Capacitance
Power
Power Dissipation (Maximum @ On 40×40×0.7 mm ceramic board)
Power Dissipation (Maximum @ Without heatsink)
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Transition Frequency
Vce Saturation (Max) @ Ib, Ic
Voltage

2SA1797T100Q Description

Short technical summary and product information.

The ROHM 2SA1797T100Q is a PNP bipolar junction transistor designed for medium-power switching and amplification applications. It offers a maximum collector-emitter breakdown voltage of -50V and a DC collector current rating of -3A (pulse capability up to -6A). The device features a low collector-emitter saturation voltage of -0.35V max at IC/IB = -1A/-50mA, reducing power losses in saturated switching circuits.

 

The DC current gain (hFE) is typically 200 at VCE = -2V, IC = -1.5A, ensuring consistent performance across operating conditions. The transition frequency (fT) is 200 MHz, supporting moderate-speed switching. Output capacitance (Cob) is 45 pF typical, suitable for general-purpose use.

 

This transistor is housed in a surface-mount MPT3 package (TO-243AA), with dimensions 4.5 x 2.5 mm and a low profile (1.6 mm height). Power dissipation is 0.5W without a heatsink and 2W when mounted on a 40x40x0.7mm ceramic board. The operating junction temperature range is up to 150°C. The part is supplied in tape-and-reel packaging with a standard quantity of 1000 pieces per reel.

2SA1797T100Q Quick Information

Product Type: Bipolar Transistor
Canonical Name: ROHM 2SA1797T100Q PNP Bipolar Transistor
Subcategory: PNP Power Transistor

2SA1797T100Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SA1797T100Q Estimated Pricing

Qty Low High
1+ $1.05 $1.05
10+ $0.66 $0.66
100+ $0.43 $0.43
500+ $0.33 $0.33
1,000+ $0.30 $0.30
2,000+ $0.27 $0.27
3,000+ $0.26 $0.26
5,000+ $0.24 $0.24
7,000+ $0.23 $0.23
10,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1797T100Q Features

  • Low collector-emitter saturation voltage.
  • High DC current gain (hFE ≥ 200).
  • Surface mount MPT3 package.
  • Rated for 50V and 3A operation.
  • 200 MHz transition frequency.

2SA1797T100Q Applications

  • Suitable for motor driver circuits.
  • Used in power management modules.
  • Ideal for relay and solenoid drivers.
  • Works in DC-DC converter designs.
  • General purpose switching circuits.

2SA1797T100Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (VCEO) is -50V.

What is the maximum collector current?

The maximum DC collector current is -3A, with pulse capability of -6A (Pw=10ms).

What is the collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is -0.35V at IC/IB = -1A/-50mA.

What is the DC current gain (hFE)?

The DC current gain (hFE) is minimum 200 at VCE=-2V, IC=-1.5A (hFE2) and minimum 36 at VCE=-2V, IC=-0.5A (hFE1).

What package is this transistor available in?

It comes in a surface mount MPT3 package (TO-243AA).

What is the power dissipation rating?

Power dissipation is 0.5W without heatsink, and 2W when mounted on a 40×40×0.7mm ceramic board.

Is this component RoHS compliant?

The existing database lists this part as RoHS3 compliant, but this information is unverified and should be confirmed from an official source.

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