2SA1768S-AN This PNP bipolar transistor from On Semiconductor features a collector-to-emitter voltage of -160V, collector current of -0.7A, and a gain bandwidth product of 120 MHz. It is housed in a SC-71 through-hole package.
Mfr Part #:

2SA1768S-AN

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
This PNP bipolar transistor from On Semiconductor features a collector-to-emitter voltage of -160V, collector current of -0.7A, and a gain bandwidth product of 120 MHz. It is housed in a SC-71 through-hole package.
Total Stock: 105,000 pcs
$ Price Range: $1.03

2SA1768S-AN Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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105,000 pcs
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2SA1768S-AN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-to-Emitter Saturation Voltage
Collector Current (Pulse)
Collector Cutoff Current
Collector-to-Base Breakdown Voltage
Collector-to-Base Voltage
Collector-to-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-to-Base Breakdown Voltage
Emitter-to-Base Voltage
Fall Time
Frequency
Mounting Type
Operating Temperature
Output Capacitance
Packing Type
Power
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Tstg (Maximum)
Tstg (Typical @ See specified Test Circuit)
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ VCE=-5 V, IC=-10 mA)

2SA1768S-AN Description

Short technical summary and product information.

The 2SA1768S-AN is a PNP bipolar transistor manufactured by On Semiconductor using the MBIT process. It is designed for high voltage switching and amplification applications. Absolute maximum ratings include a collector-to-base voltage of -180V, collector-to-emitter voltage of -160V, emitter-to-base voltage of -6V, continuous collector current of -0.7A, and pulse current of -1.5A. The device can dissipate up to 1W and operates at a junction temperature up to 150°C.

 

Electrical characteristics at 25°C include a DC current gain (hFE) of 140 minimum at VCE=-5V, IC=-100mA, and 90 minimum at VCE=-5V, IC=-10mA. The gain bandwidth product is typically 120 MHz. Output capacitance is typically 11 pF. Collector-to-emitter saturation voltage is typically -0.2V and maximum -0.5V at IC=-250mA, IB=-25mA. Base-to-emitter saturation voltage is typically -0.85V and maximum -1.2V. Switching times are typical: turn-on time 60ns, storage time 900ns, fall time 60ns.

 

The transistor is offered in the SC-71 package (NMP type) with through-hole mounting. The standard packing quantity is 2500 pieces per box in tape. The device is Pb-free per the datasheet ordering information. Typical applications include color TV sound output, converters, and inverters.

2SA1768S-AN Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: 2SA1768S-AN PNP Bipolar Transistor
Subcategory: Single PNP BJT

2SA1768S-AN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SA1768S-AN Estimated Pricing

Qty Low High
2,500+ $1.03 $1.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1768S-AN Features

  • High voltage PNP transistor, -160V VCEO.
  • Fast switching with 60ns turn-on time.
  • Low collector-to-emitter saturation voltage.
  • Gain bandwidth product of 120 MHz.
  • Pb-free and through-hole SC-71 package.

2SA1768S-AN Applications

  • Color TV sound output circuits.
  • Converter and inverter circuits.
  • High voltage switching applications.
  • General purpose amplification.

2SA1768S-AN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage (VCEO) of the 2SA1768S-AN?

The maximum VCEO is -160 V.

What is the package type of the 2SA1768S-AN?

The package is SC-71 (NMP type) with through-hole mounting.

What is the operating temperature range for the 2SA1768S-AN?

The maximum junction temperature is 150°C, and the storage temperature range is -55 to +150°C.

Is the 2SA1768S-AN RoHS compliant?

The part is listed as RoHS3 compliant in the distributor database, but this is unverified. The datasheet indicates it is Pb-free.

What is the DC current gain (hFE) of the 2SA1768S-AN?

At VCE=-5V and IC=-100mA, the minimum hFE is 140. At VCE=-5V and IC=-10mA, the minimum hFE is 90.

What is the maximum collector current for the 2SA1768S-AN?

The maximum continuous collector current (IC) is -0.7 A, and the pulse current (ICP) is -1.5 A.

What are the switching times of the 2SA1768S-AN?

Typical switching times are: turn-on time 60 ns, storage time 900 ns, and fall time 60 ns.

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