2SA1707S-AN PNP bipolar transistor rated 50V collector-emitter voltage and 3A collector current.
Mfr Part #:

2SA1707S-AN

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor rated 50V collector-emitter voltage and 3A collector current.
Total Stock: 2,500 pcs
$ Price Range: $0.25

2SA1707S-AN Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

2SA1707S-AN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Pulse (ICP)
Collector-Base Breakdown Voltage (V(BR)CBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (V(BR)CEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage (V(BR)EBO)
Emitter-Base Voltage (VEBO)
Fall Time (tf)
Frequency
Lead Spacing
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Standard Package Qty
Storage Temperature
Storage Temperature Range (TSTG)
Storage Time (tstg)
Supplier Device Package
Tape & Reel
Transistor Type
Turn-On Time (ton)
Vbe Saturation (Vbe(sat))
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum @ Vce=2 V, Ic=3 A)

2SA1707S-AN Description

Short technical summary and product information.

The 2SA1707S-AN from onsemi is a PNP bipolar junction transistor designed for medium-power switching and amplification. Key absolute maximum ratings include a collector-emitter voltage (Vceo) of -50V, collector-base voltage (Vcbo) of -60V, and a continuous collector current (Ic) of -3A. Pulse current capability extends to -6A. The DC current gain (hFE) is specified at 140 to 280 for the S rank at Vce=2V, Ic=100mA, ensuring consistent amplifier performance. The device exhibits low collector-emitter saturation voltage (Vce(sat)) of typically -0.35V at Ib=100mA, Ic=2A, reducing conduction losses. With a gain-bandwidth product (fT) of 150MHz, this transistor is suitable for moderate-speed switching applications up to audio frequencies. The part is offered in a through-hole NMP (SC-71) package, supplied in tape form with a standard pack quantity of 2,500 pieces per box. Complementary NPN part is the 2SC4487S-AN.

2SA1707S-AN Quick Information

Product Type: Bipolar Transistor
Series: 2SA1707
Canonical Name: 2SA1707S-AN On Semiconductor PNP Bipolar Transistor
Subcategory: Single BJT

2SA1707S-AN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2SA1707S-AN Estimated Pricing

Qty Low High
1,212+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1707S-AN Features

  • PNP bipolar junction transistor design.
  • Rated for 50V collector-emitter operation.
  • Continuous collector current of 3 amperes.
  • Low saturation voltage for reduced power loss.
  • Gain-bandwidth product of 150 megahertz.

2SA1707S-AN Applications

  • Medium-speed switching power supply circuits.
  • General purpose audio amplifier output stages.
  • Load driver for relay and solenoid control.
  • Output stage for motor control drivers.

2SA1707S-AN FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of this transistor?

The maximum collector-emitter voltage is -50V.

What is the maximum DC collector current rating?

The maximum continuous collector current is -3A, with pulse capability to -6A.

Does this transistor have a complementary NPN part?

Yes, the complementary NPN part is the 2SC4487S-AN.

What is the typical gain-bandwidth product?

The typical gain-bandwidth product is 150 MHz at Vce=10V, Ic=50mA.

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