Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,200 pcs
|
32200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1593S-TL-E is a PNP bipolar junction transistor manufactured by On Semiconductor, designed for general-purpose switching and amplification applications. It is rated for a maximum collector-emitter voltage of 100V and a maximum collector current of 2A, with a power dissipation of 1W. The device offers a transition frequency of 120MHz, making it suitable for moderate-speed switching circuits.
Electrical characteristics include a minimum DC current gain (hFE) of 140 at Ic=100mA and Vce=5V, and a maximum collector-emitter saturation voltage of 600mV at Ib=100mA and Ic=1A. The maximum operating junction temperature is 150°C, providing adequate thermal margin for typical operating conditions.
The transistor is housed in a TO-252-3 (DPak) surface-mount package with a supplier device package designation of TP-FA. This package is well-suited for automated assembly and offers good thermal performance for its power rating. The surface-mount form factor makes it appropriate for compact PCB designs in consumer electronics, power management, and industrial control applications.
As a PNP device, it is commonly used in complementary circuit configurations with NPN transistors, in load-switching circuits, and in audio amplifier output stages where its voltage and current ratings provide reliable performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.47 | $1.47 |
| 10+ | $0.93 | $0.93 |
| 100+ | $0.61 | $0.61 |
| 700+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 100V.
The maximum collector current (IC) is 2A.
The maximum power dissipation is 1W.
The transition frequency (fT) is 120MHz.
The minimum DC current gain (hFE) is 140, measured at Ic=100mA and Vce=5V.
The maximum collector-emitter saturation voltage (VCE(sat)) is 600mV, measured at Ib=100mA and Ic=1A.
The transistor comes in a TO-252-3 (DPak) surface-mount package with supplier device package TP-FA.