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2SA1576UBTLR PNP silicon epitaxial planar transistor for general purpose small signal amplification. Rated at 50V VCEO and 150mA collector current.
Mfr Part #:

2SA1576UBTLR

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
PNP silicon epitaxial planar transistor for general purpose small signal amplification. Rated at 50V VCEO and 150mA collector current.
Total Stock: 50 pcs
$ Price Range: $0.03 - $0.21

2SA1576UBTLR Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

2SA1576UBTLR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulsed)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Medical Grade
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
dc_current_gain (Minimum/Typical/Maximum @ Ic=-1 mA, Vce=-6 V)
hFE Rank

2SA1576UBTLR Description

Short technical summary and product information.

The 2SA1576UBTLR is a PNP silicon epitaxial planar transistor from ROHM Semiconductor designed for general purpose small signal amplification. It features a collector-emitter voltage rating of -50 V and a collector current rating of -150 mA, with a power dissipation of 200 mW. The device offers excellent hFE linearity with a DC current gain range of 120 to 390 (rank R) at Ic=-1 mA, Vce=-6 V. Transition frequency is typically 140 MHz, and output capacitance is 3.5 pF typical. The transistor is housed in a surface mount SC-85 package (UMT3F supplier device package) and is rated for operation up to 150°C junction temperature. It complements the 2SC4081UB NPN transistor.

2SA1576UBTLR Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SA1576UBTLR PNP Silicon Epitaxial Planar Transistor
Subcategory: Single BJT

2SA1576UBTLR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SA1576UBTLR Estimated Pricing

Qty Low High
1+ $0.21 $0.21
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04
6,000+ $0.04 $0.04
9,000+ $0.03 $0.03
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1576UBTLR Features

  • PNP silicon epitaxial planar transistor.
  • Rated for 50V collector-emitter voltage.
  • 150mA continuous collector current.
  • 200mW power dissipation capability.
  • Surface mount UMT3F (SC-85) package.

2SA1576UBTLR Applications

  • General purpose small signal amplification.
  • Audio preamplifier and driver stages.
  • Signal switching and interface circuits.

2SA1576UBTLR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SA1576UBTLR?

The collector-emitter voltage (VCEO) is -50 V (absolute maximum rating).

What is the maximum collector current?

The maximum continuous collector current is -150 mA; pulsed current (1ms single pulse) is -200 mA.

What is the package type?

The transistor is housed in a surface mount SC-85 package, with supplier device package designation UMT3F.

What is the operating temperature range?

The maximum junction temperature is 150°C.

Is the 2SA1576UBTLR RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

What is the DC current gain (hFE) range?

For rank R, the hFE range is 180 to 390 at Ic=-1 mA, Vce=-6 V.

What is the complementary NPN transistor?

The complementary NPN transistor is the 2SC4081UB from ROHM Semiconductor.

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