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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,000 pcs
|
27000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1576U3HZGT106R is a PNP bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter breakdown voltage of 50V, a continuous collector current of 150mA, and a power dissipation of 200mW. The transistor features a transition frequency of 140MHz and a minimum DC current gain (hFE) of 120 at 1mA collector current and 6V Vce. The maximum Vce saturation voltage is 500mV at 5mA base current and 5mA collector current. The device is housed in a surface-mount SC-70/SOT-323 package with a supplier device package designation of UMT3. It is rated for an operating junction temperature of up to 150°C. The part is RoHS3 compliant and has an MSL of 1 (unlimited). It is suitable for use in compact electronic devices where space is limited.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.31 | $0.31 |
| 10+ | $0.19 | $0.19 |
| 100+ | $0.12 | $0.12 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.08 | $0.08 |
| 6,000+ | $0.05 | $0.05 |
| 9,000+ | $0.05 | $0.05 |
| 24,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V.
150mA.
200mW.
140MHz.
SC-70, SOT-323 (UMT3).
Up to 150°C.
Yes, RoHS3 compliant (unverified).