| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1419T-TD-E is a PNP bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 160V and a continuous collector current rating of 1.5A. The device can dissipate up to 500mW of power. With a minimum DC current gain (hFE) of 100 at 100mA collector current and 5V collector-emitter voltage, it provides reliable amplification. The maximum collector-emitter saturation voltage is 500mV at a base current of 50mA and collector current of 500mA, ensuring low on-state losses. The transition frequency is 120MHz, making it suitable for moderate-speed switching applications. The operating junction temperature can reach up to 150°C. This transistor is housed in a surface mount TO-243AA package, with a supplier device package designation of PCP, allowing for compact PCB assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.67 | $0.67 |
| 10+ | $0.59 | $0.59 |
| 100+ | $0.45 | $0.45 |
| 500+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
160 V.
Surface mount TO-243AA (supplier device package PCP).
150°C.
RoHS3 Compliant (unverified).
Minimum 100 at Ic=100mA, Vce=5V.
120 MHz.
1.5 A.