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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1418S-TD-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter breakdown voltage (VCEO) of 160V and a continuous collector current (IC) rating of 700mA. The device can dissipate up to 500mW of power. With a transition frequency (ft) of 120MHz and a minimum DC current gain (hFE) of 100 at 100mA, it is suitable for general-purpose switching and amplification applications.
The transistor is housed in a surface-mount TO-243AA package (supplier device package PCP), enabling compact PCB assembly. The maximum Vce saturation voltage is 400mV at 250mA collector current, ensuring low on-state losses. The operating junction temperature range extends to 150°C. The component is marked as RoHS3 compliant, though this status is unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.05 | $1.05 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.43 | $0.43 |
| 1,000+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
160V.
TO-243AA (surface mount).
150°C (junction temperature).
Yes, it is marked as RoHS3 compliant, but this status is unverified.
700mA.
100 at Ic=100mA, Vce=5V.
120MHz.