| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,000 pcs
|
26000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1417T-TD-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter voltage of 100V and a continuous collector current of 2A. The device offers a power dissipation of 500mW and a transition frequency of 120MHz, making it suitable for moderate-speed switching circuits.
The transistor has a minimum DC current gain (hFE) of 100 at Ic=100mA and Vce=5V, and a maximum Vce saturation voltage of 400mV at Ib=100mA and Ic=1A. It is housed in a surface-mount TO-243AA package (supplier device package PCP) and can operate at a junction temperature up to 150°C. The part is RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.08 | $1.08 |
| 10+ | $0.68 | $0.68 |
| 100+ | $0.44 | $0.44 |
| 500+ | $0.34 | $0.34 |
| 1,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 100V.
It is available in a TO-243AA surface-mount package (supplier device package PCP).
The maximum junction temperature is 150°C.
Yes, it is listed as RoHS3 Compliant, though this is unverified.
The continuous collector current (IC) is 2A.
The power dissipation (PC) is 500mW.
The minimum DC current gain is 100 at Ic=100mA and Vce=5V.
