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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,775 pcs
|
6775 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1416T-TD-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a maximum collector-emitter voltage of 100V and a maximum collector current of 1A. The device offers a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a maximum Vce saturation voltage of 400mV at 40mA base current and 400mA collector current.
The transistor is housed in a TO-243AA surface-mount package with a supplier device package designation of PCP. It supports a maximum power dissipation of 500mW and can operate at junction temperatures up to 150°C. The transition frequency is 120 MHz, making it suitable for moderate-speed switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.43 | $0.43 |
| 500+ | $0.33 | $0.33 |
| 1,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 100V.
The maximum collector current is 1A.
It comes in a TO-243AA surface-mount package, also designated as PCP.
The maximum operating junction temperature is 150°C.
The minimum DC current gain (hFE) is 100 at Ic=100mA and Vce=5V.
The transition frequency is 120 MHz.
The maximum power dissipation is 500mW.