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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
32 pcs
|
32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1416S-TD-E is a PNP bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter voltage (Vceo) of 100V and a continuous collector current (Ic) rating of 1A, making it suitable for medium-power switching and amplification applications. The device offers a DC current gain (hFE) of at least 100 at 100mA collector current and 5V Vce, with a maximum saturation voltage of 400mV at 40mA base current and 400mA collector current. The transition frequency (ft) is 120MHz, supporting moderate-speed switching.
The transistor is housed in a surface-mount TO-243AA package (supplier device package PCP) and is rated for a maximum power dissipation of 500mW. The operating junction temperature can reach up to 150°C. The part is listed as RoHS3 compliant, though this status is unverified. No datasheet is currently linked for this component.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.88 | $0.88 |
| 10+ | $0.55 | $0.55 |
| 100+ | $0.35 | $0.35 |
| 500+ | $0.27 | $0.27 |
| 1,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) is 100V.
It is available in a surface-mount TO-243AA package, also referred to as PCP.
The maximum operating junction temperature is 150°C.
It is listed as RoHS3 compliant, but this status is unverified.
The minimum DC current gain is 100 at Ic=100mA and Vce=5V.
The transition frequency (ft) is 120MHz.