| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SA1381-E is a PNP bipolar transistor manufactured by Samsung Electronics. It is designed for various electronic applications requiring a high voltage capability, with a maximum collector-emitter voltage (Vce) of -300V and a maximum collector-base voltage (Vcb) of -300V. The continuous collector current (Ic) is rated at -0.1A, and it offers a collector dissipation (Pc) of 7W.
This transistor operates with a DC current gain (hFE) ranging from 100 to 200 and has a minimum transition frequency (fT) of 150 MHz. The operating and storage junction temperature range is from -55°C to +150°C. The 2SA1381-E comes in a TO-126 package, suitable for through-hole mounting.
It is complementary to the NPN transistor 2SC3503-E. Several SMD versions and replacements are available, including BF621, BF821, PMBTA92, and various KSA, KTA, and MJE series parts, indicating its common use and interchangeability in circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-300 V
-0.1 A
7 W
100 to 200
150 MHz
-55 to +150 °C
TO-126