| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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81 pcs
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81 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1360 is a PNP Epitaxial Silicon Transistor utilizing PCT Process technology, suitable for audio frequency amplifier applications. It is complementary to the 2SC3423.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -150V, a collector current (IC) of -50mA, and a base current (IB) of -5mA. The device boasts a high transition frequency (fT) of 200 MHz (typ.) and a small collector output capacitance (Cob) of 2.5 pF (typ.). The maximum power dissipation (PC) is rated at 5W at 25°C case temperature.
This transistor comes in a TO-126 package. The operating junction temperature (Tj) is up to 150°C, with a storage temperature range from -55°C to 150°C. It is designed for applications requiring reliable amplification in audio frequency ranges.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SA1360 is -150V.
The maximum continuous collector current (IC) for the 2SA1360 is -50mA.
The typical transition frequency (fT) of the 2SA1360 is 200 MHz.
The 2SA1360 transistor is supplied in a TO-126 package.
The maximum power dissipation for the 2SA1360 at 25°C case temperature is 5W.