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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SA1315 from Toshiba is a PNP Silicon Transistor, suitable for a range of electronic circuit designs. This component features a maximum collector current rating of 2A and a collector-emitter voltage of up to 80V.
With a maximum power dissipation of 900mW and a maximum operating temperature of 150°C, the 2SA1315 is built for reliable performance. It comes in a TO226-3 package, which is a common surface-mount or through-hole form factor depending on the specific variant and board design.
This transistor is part of the broader category of Bipolar Junction Transistors (BJTs), specifically within the arrays and pre-biased types. Its specifications make it a versatile component for amplification and switching applications in consumer electronics, industrial controls, and other general-purpose circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA1315 is 2A.
The collector-emitter voltage rating for the 2SA1315 is 80V.
The maximum power dissipation for the 2SA1315 is 900mW.
The maximum operating temperature for the 2SA1315 is 150°C.
The 2SA1315 is supplied in a TO226-3 package.