| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
863 pcs
|
863 pcs | On Request | 1 | On Request | On Request | 99+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba 2SA1314BTE12R is a single bipolar junction transistor (BJT) from the discrete semiconductor products category. This component is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions.
As a BJT, the 2SA1314BTE12R is designed for amplification and switching applications. While specific electrical characteristics such as voltage, current, and gain are not detailed in the provided data, its classification suggests it functions as a standard NPN or PNP transistor.
Further details regarding its package type, mounting method, and precise operating parameters would typically be found in the manufacturer's datasheet. This part is suitable for integration into various electronic circuits requiring discrete transistor functionality.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SA1314BTE12R is RoHS3 Compliant.
The MSL for the 2SA1314BTE12R is 1 Unlimited.
The REACH status for the 2SA1314BTE12R is Unaffected.