SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1306 is a Silicon PNP Transistor, identified by its part number 2SA1306 and manufactured by Toshiba. This component is suitable for applications requiring a robust transistor with specific electrical characteristics.
Key electrical specifications include a maximum collector current of 1.5A and a maximum collector-emitter voltage of 200V. The transistor also features a maximum power dissipation of 20W and a typical collector-emitter saturation voltage of 1.5V. Its maximum operating temperature is rated at 150°C.
This transistor is part of the broader category of discrete semiconductor products, specifically falling under transistors. Its design and specifications make it a component for consideration in power switching and amplification circuits where PNP characteristics are required.
The component has 3 terminals and is supplied in a package with a standard quantity that requires further verification. Mounting type and lead style details are not explicitly provided in the available data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA1306 is 1.5A.
The maximum collector-emitter voltage for the 2SA1306 is 200V.
The maximum power dissipation for the 2SA1306 is 20W.
The maximum operating temperature for the 2SA1306 is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
