2SA1303 PNP silicon epitaxial planar transistor, 150V VCEO, 14A IC, TO-3P package. Complement to 2SC3284.
Mfr Part #:

2SA1303

Available from 1 distributors
Mfr Name: Sanken
Sanken
PNP silicon epitaxial planar transistor, 150V VCEO, 14A IC, TO-3P package. Complement to 2SC3284.
Total Stock: 4 pcs
$ Price Range: $2.00

2SA1303 Available from 1 distributor

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2SA1303 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Base Current (IB)
Chip Division
Collector-Base Breakdown Voltage (VCBO)
Collector-Emitter Breakdown Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) Rank @ VCE=-4V, IC=-5A
Emitter-Base Breakdown Voltage (VEBO)
Fall Time (tf) (Typical) @ VCC=-60V, RL=12Ω, IC=-5A, VBB2=5V, IB1=-500mA, IB2=500mA
Frequency
Lead Style
Mounting Type
Operating Temperature
Output Capacitance (COB) (Typical) @ VCB=-10V, f=1MHz
Power
Storage Temperature
Storage Temperature Range
Storage Time (tstg) (Typical) @ VCC=-60V, RL=12Ω, IC=-5A, VBB2=5V, IB1=-500mA, IB2=500mA
Supplier Device Package
Transistor Type
Turn-On Time (ton) (Typical) @ VCC=-60V, RL=12Ω, IC=-5A, VBB2=5V, IB1=-500mA, IB2=500mA
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

2SA1303 Description

Short technical summary and product information.

The 2SA1303 is a PNP silicon epitaxial planar transistor from Sanken Electric, designed primarily for audio amplifier output stages. It is the complementary part to the NPN transistor 2SC3284, enabling push-pull configurations.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage of -150V, a maximum collector current of -14A, and a power dissipation of 125W at 25°C case temperature. The DC current gain ranges from 50 to 180, and the collector-emitter saturation voltage is typically -2V at 5A. The transition frequency is 50 MHz, making it suitable for audio frequency applications.

 

The transistor is housed in a TO-3P-3 (SC-65-3) through-hole package with a weight of 6 grams. It features a maximum junction temperature of 150°C and a storage temperature range of -55 to +150°C. The chip division is LAPT (high-frequency multi-emitter technology).

2SA1303 Quick Information

Product Type: Bipolar Transistor - PNP
Canonical Name: 2SA1303 PNP Bipolar Transistor
Subcategory: PNP

2SA1303 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SA1303 Estimated Pricing

Qty Low High
1,000+ $2.00 $2.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SA1303 Features

  • PNP epitaxial planar transistor for audio output.
  • 150V collector-emitter breakdown voltage.
  • 14A maximum collector current rating.
  • 125W power dissipation at 25°C case.
  • TO-3P through-hole package, 6g weight.

2SA1303 Applications

  • Audio amplifier output stage applications.
  • General purpose switching and amplification.
  • Complementary pair with 2SC3284.

2SA1303 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage?

-150V minimum.

What is the package type?

TO-3P-3, SC-65-3 (TO-3P).

What is the operating junction temperature range?

Maximum 150°C. Storage temperature -55 to +150°C.

Is the 2SA1303 RoHS compliant?

Yes, RoHS3 compliant (manufacturer states RoHS: YES).

What is the complementary NPN transistor?

2SC3284.

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