| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SA1301 is a Silicon PNP Transistor belonging to the Bipolar Junction Transistor (BJT) family. It is designed for use in electronic circuits requiring a PNP transistor with specific voltage and current handling capabilities.
Key electrical specifications include a maximum Collector Emitter Voltage of 160V and a maximum Collector Current of 12A. The transistor has 3 terminals and is housed in a Plastic/Epoxy package, typically mounted through a hole.
This component is suitable for applications where a robust PNP transistor is needed. Its specifications suggest suitability for power switching or amplification tasks within its rated limits. The through-hole mounting makes it convenient for breadboarding and through-hole PCB assembly.
As a standard component, the 2SA1301 is a reliable choice for designers needing a general-purpose PNP transistor with moderate power handling capabilities. Further details on specific operating conditions and performance characteristics can be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the 2SA1301 is 160V.
The 2SA1301 transistor has a maximum collector current of 12A.
The 2SA1301 transistor has 3 terminals.
The 2SA1301 transistor is in a Plastic/Epoxy package.
The 2SA1301 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SA1301 is 1 Unlimited.
The 2SA1301 is REACH Unaffected.