| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,620 pcs
|
8620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SA1216 is a PNP silicon epitaxial planar transistor from Sanken, designed for high-power audio amplifier output stages and general purpose applications. It features a collector-base voltage of -180V, collector-emitter voltage of -180V, and a continuous collector current of -17A with a power dissipation of 200W. The transistor utilizes LAPT (High Frequency Multi Emitter) technology for improved high-frequency performance and a wide safe operating area.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 8A, 4V, and a typical transition frequency of 40MHz. The collector-emitter saturation voltage is a maximum of 2V at 8A/800mA base current. The device is housed in an MT-200 through-hole package and is RoHS compliant. A complementary NPN part, the 2SC2922, is available for push-pull amplifier designs.
The 2SA1216 is suitable for audio amplifier output stages where high current and voltage handling are required. It is rated for operation up to a junction temperature of 150°C and can be stored between -55°C and 150°C. Note that this part is marked as obsolete by the manufacturer.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.95 | $2.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage (VCBO) is -180V, collector-emitter voltage (VCEO) is -180V, and emitter-base voltage (VEBO) is -5V.
The 2SA1216 is supplied in an MT-200 through-hole package (3-ESIP form factor).
The junction temperature (Tj) is rated to 150°C, and the storage temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant per the manufacturer.
The minimum hFE is 30 at IC=8A, VCE=4V. The device also has hFE ranks: O(30-60), Y(50-100), P(70-140), G(90-180).
The typical transition frequency (fT) is 40 MHz.
Yes, the complementary NPN transistor is the 2SC2922 from Sanken.