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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base Current (IB) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Storage Temperature | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight | |
| hFE (Minimum/Maximum @ VCE=-4 V, IC=-5 A) |
The 2SA1215 is a PNP silicon epitaxial planar transistor manufactured by Sanken Electric. It utilizes LAPT (high frequency multi emitter transistor) technology, making it well-suited for audio amplifier output stages and other high-power linear applications. The device offers a collector-base breakdown voltage (VCBO) of -160 V, collector-emitter breakdown voltage (VCEO) of -160 V, and a continuous collector current (IC) rating of -15 A. Power dissipation is rated at 150 W at a case temperature of 25°C.
Electrical characteristics include a DC current gain (hFE) range of 50 to 180 (depending on rank) at VCE=-4 V and IC=-5 A, and a typical transition frequency (fT) of 50 MHz at VCE=-12 V and IE=2 A. The collector-emitter saturation voltage (VCE(sat)) is typically -2 V maximum at IC=-5 A and IB=-0.5 A. Switching times are specified with typical turn-on time of 0.25 µs, storage time of 0.85 µs, and fall time of 0.2 µs.
The transistor is housed in a through-hole MT-200 package (3-ESIP) with a weight of 18.4 g. It is RoHS3 compliant. A complementary NPN part, the 2SC2921, is available for push-pull amplifier designs. The 2SA1215 is now marked as obsolete by the manufacturer.
The 2SA1215 has a collector-base breakdown voltage (VCBO) of -160 V, collector-emitter breakdown voltage (VCEO) of -160 V, and emitter-base breakdown voltage (VEBO) of -5 V.
The 2SA1215 is available in a through-hole MT-200 package (3-ESIP).
The maximum junction temperature (Tj) is 150 °C, and the storage temperature range (Tstg) is -55 to +150 °C.
Yes, the 2SA1215 is RoHS3 compliant as verified on the manufacturer's product page.
The 2SA1215 has a minimum hFE of 50 at VCE=-4 V, IC=-5 A. It is available in three hFE ranks: O (50-100), P (70-140), and Y (90-180).
Yes, the complementary NPN transistor is the 2SC2921 from Sanken.
Typical switching times at VCC=-60 V, RL=12 Ω, IC=-5 A, IB1=IB2=500 mA are: turn-on time 0.25 µs, storage time 0.85 µs, fall time 0.2 µs.