| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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780 pcs
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780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SA1210 from Sanyo Denki is a Silicon PNP Bipolar Junction Transistor (BJT) designed for general-purpose applications. It comes in a TO126 package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector current of 140mA and a maximum power dissipation of 1W. The transistor exhibits a minimum hFE (Forward Current Transfer Ratio) of 100 and a maximum of 400. Its breakdown voltages are rated at 200V for both Vbr CBO and Vbr CEO. The transition frequency (ft) is a minimum of 150MHz, indicating suitability for moderate frequency applications.
Operating temperature ranges up to 150°C, with a maximum junction temperature of 125°C. The collector capacitance is specified at 4pF. This component is designed for through-hole mounting and is not surface mountable.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified. The 2SA1210 is an equivalent to the 2SA1210T.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SA1210 is 140mA.
The 2SA1210 transistor has a breakdown voltage of 200V for both collector-base (Vbr CBO) and collector-emitter (Vbr CEO).
The transition frequency (ft) of the 2SA1210 transistor is a minimum of 150MHz.
The maximum operating temperature for the 2SA1210 transistor is 150°C.
The 2SA1210 transistor is supplied in a TO126 package.
The RoHS Status for the 2SA1210 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SA1210 is 1 Unlimited.