2SA1186

The 2SA1186 is a PNP silicon epitaxial planar transistor from Sanken, designed for linear amplifier applications. It features a maximum collector-emitter voltage (VCEO) of -150V, a continuous collector current (IC) of -10A, and a power dissipation of 100W at a case temperature of 25°C. The transistor offers a DC current gain (hFE) ranging from 50 to 180 at VCE=-4V and IC=-3A, with a typical transition frequency (fT) of 60MHz.

This device utilizes Sanken's LAPT (Linear Amplifier Power Transistor) technology, which provides constant hFE characteristics over a wide current range, making it suitable for high-quality audio power amplifiers. The collector-emitter saturation voltage (VCE(sat)) is typically -2.0V maximum at IC=-5A and IB=-0.5A. Thermal characteristics include a junction-to-case thermal resistance of 1.25°C/W and a junction-to-ambient thermal resistance of 35.7°C/W.

The 2SA1186 is housed in a TO-3P-3L through-hole package with a bare lead frame that is lead-free and RoHS compliant. The storage temperature range is -55°C to 150°C, and the maximum junction temperature is 150°C. The complementary NPN transistor is the 2SC2837.

This part is marked as obsolete and not recommended for new designs (NRND). It is primarily intended for audio power amplifier output stages and general-purpose switching applications where high voltage and current capability are required.