| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,800 pcs
|
12800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Spacing |
The 2SA1115F is a Silicon PNP Transistor from Mitsubishi Electric. This component is designed for general-purpose applications and offers a collector-emitter breakdown voltage of 50V.
Key electrical characteristics include a maximum continuous collector current of 0.2A and a maximum power dissipation of 0.3W. The transistor operates at frequencies up to 200MHz, making it suitable for various signal amplification and switching tasks.
This transistor falls under the category of Bipolar Junction Transistors (BJTs), specifically single, pre-biased types. Its specifications make it a versatile component for electronic circuit design and repair.
While specific packaging and mounting details are not provided, its classification suggests it is intended for standard electronic assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The maximum continuous collector current is 0.2A.
The maximum power dissipation is 0.3W.
The transition frequency is 200MHz.
