| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Turn On Time |
The 2SA1076 from Fujitsu Semiconductor is a silicon PNP power transistor suitable for various power applications. It features a high Collector-Emitter Breakdown Voltage of -160V and a continuous Collector Current rating of -12A.
This transistor is designed for applications such as power amplifiers, switching regulators, and DC-DC converters. Its electrical characteristics include a Collector-Emitter Saturation Voltage ranging from -0.9V to -1.8V and a DC Current Gain (hFE) between 60 and 200 at IC=-1A.
The 2SA1076 has a maximum power dissipation of 120W at 25℃ and a maximum junction temperature of 150℃. The component has 3 terminals and is intended for through-hole mounting, though specific package details are not provided.
Key electrical parameters include a Current-Gain-Bandwidth Product (fT) of 45 to 60 MHz and switching times like turn-on time (ton) of 0.15μs, storage time (tstg) of 0.5μs, and fall time (tf) of 0.11μs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (VCEO) for the 2SA1076 is -160V.
The continuous Collector Current (IC) for the 2SA1076 is -12A.
The maximum power dissipation (PC) for the 2SA1076 is 120W at 25℃.
The storage temperature range (Tstg) for the 2SA1076 is -65℃ to 150℃.
The DC Current Gain (hFE) is 60 to 200 at IC=-1A and VCE=-5V, and a minimum of 40 at IC=-7A and VCE=-5V.
The 2SA1076 is used in power amplifier applications, switching regulators, and DC-DC converter applications.