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160 pcs
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160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Unisonic 2SA1020G is a PNP bipolar junction transistor (BJT) housed in a SOT-89 package. It is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 2A. The device offers a typical DC current gain (hFE) of 120 at 500mA and 2V. Its power dissipation is rated at 500mW, and it operates at temperatures up to 150°C.
The SOT-89 package is suitable for surface-mount designs, offering a compact footprint. This transistor is a component within the broader category of discrete semiconductor products, specifically bipolar transistors.
This part is supplied by Unisonic and is recognized globally. Its specifications make it suitable for integration into various electronic circuits requiring a PNP transistor with moderate current and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) for the 2SA1020G is 50V.
The maximum continuous collector current (Ic) for the 2SA1020G is 2A.
The power dissipation (Pd) for the 2SA1020G is 500mW.
The typical DC current gain (hFE) for the 2SA1020G is 120 at 500mA and 2V.
The 2SA1020G can operate at temperatures up to +150°C.
The 2SA1020G is supplied in a SOT-89 package.