| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,477 pcs
|
1477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2SA1015-Y is a bipolar junction transistor (BJT) designed for through hole mounting. It is manufactured by Toshiba and belongs to the 2SA1015 series of PNP transistors. Key electrical specifications include a maximum collector current of 150mA, a collector-base voltage of 50V, and a collector-emitter saturation voltage of 300mV. The device can dissipate up to 400mW of power. It operates over a wide temperature range from -55°C to 125°C, making it suitable for demanding environments. The transistor has 3 terminals and is housed in a through hole package, which allows for easy insertion into printed circuit boards and prototyping. Typical applications include general purpose switching and amplification in low-power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 150mA.
The collector-base voltage is 50V.
The maximum power dissipation is 400mW.
The operating temperature range is -55°C to 125°C.
The collector-emitter saturation voltage is 300mV.
The mounting type is through hole.
It has 3 terminals.