| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
187 pcs
|
187 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The Toshiba 2SA1015 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications, particularly in audio frequency amplifier driver stages. It is the complementary type to the 2SC1815.
Key electrical specifications include a collector-emitter voltage (Vceo) of -50V, a collector-base voltage (Vcb) of 50V, and an emitter-base voltage (Veb) of 5V. The maximum continuous collector current (Ic) is 150mA, with a collector power dissipation (Pc) of 0.4W. The transistor operates at a transition frequency (fT) of 80MHz.
This component is suitable for various audio amplifier circuits and other general-purpose amplification tasks. Its design emphasizes high voltage and high current capabilities, along with excellent hFE linearity and low noise characteristics, ensuring robust device performance and reliable operation.
While specific packaging details like case code and mounting type are not explicitly detailed in the provided information, it is typically available in through-hole packages for easy integration into circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter voltage (Vceo) for the 2SA1015 is -50V.
The maximum collector current (Ic) for the 2SA1015 is 150mA.
The collector power dissipation (Pc) for the 2SA1015 is 0.4W.
The transition frequency (fT) for the 2SA1015 is 80MHz.
The 2SA1015 is complementary to the 2SC1815 transistor.
