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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 0645+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Capacitance (Cc) | |
| Collector Current (DC) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (VCEsat) | |
| Collector-Emitter Voltage (VCEO) | |
| Emitter-Base Voltage (VEBO) | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Ambient Temperature (Tamb) | |
| Package Type | |
| Peak Base Current | |
| Peak Collector Current | |
| Storage Temperature (Tstg) | |
| Termination Style | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation (Ptot) | |
| Transition Frequency (fT) | |
| hFE (Minimum @ IC=500 mA, VCE=10 V) | |
| hfe (Minimum/Maximum @ IC=150 mA, VCE=10 V) |
The 2PD602AS is an NPN general purpose transistor manufactured by NXP Semiconductors. It is designed for general purpose switching and amplification applications. The device is housed in a plastic SC-59 (SOT346) surface mount package with three leads.
Key electrical specifications include a maximum collector-base voltage of 60 V, a maximum collector-emitter voltage of 50 V, and a maximum collector current of 500 mA DC (1 A peak). The DC current gain (hFE) for the 2PD602AS bin is 170 to 340 at 150 mA collector current. The transition frequency (fT) is a minimum of 180 MHz, making it suitable for moderate-speed switching circuits.
The transistor has a total power dissipation of 250 mW when mounted on an FR4 PCB at ambient temperatures up to 25 °C. The operating junction temperature range is -65 to 150 °C. The PNP complement for this device is the 2PB710A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (Ic) is 500 mA DC, with a peak collector current (Icm) of 1 A.
The 2PD602AS is housed in an SC-59 (SOT346) plastic surface mount package.
The operating ambient temperature range is -65 to 150 °C.
The DC current gain (hFE) for the 2PD602AS bin is 170 to 340 at IC=150 mA and VCE=10 V.
The transition frequency (fT) is a minimum of 180 MHz at IC=50 mA and VCE=10 V.
The PNP complement for the 2PD602AS is the 2PB710A.