| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,426 pcs
|
4426 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The 2PB1219AS from NXP Semiconductors is a single PNP bipolar junction transistor (BJT) housed in an SC-70 surface-mount package. This component is designed for general-purpose amplification and switching applications.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 0.5A. The transistor offers a minimum hFE of 170 at 150mA and 10V. Its power dissipation is rated at 200mW.
With an operating temperature range from -65°C to 150°C, the 2PB1219AS is suitable for a variety of environmental conditions. The surface-mount SC-70 package makes it ideal for space-constrained PCB designs.
This transistor is RoHS3 compliant, MSL 1, and REACH unaffected, indicating adherence to common environmental and safety standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 50V.
The continuous collector current is 0.5A.
The power dissipation is 200mW.
The minimum hFE is 170 at 150mA and 10V.
The operating temperature range is from -65°C to 150°C.
The 2PB1219AS is in an SC-70 package.
The 2PB1219AS is RoHS3 Compliant.