| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N930 is an NPN bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter voltage (Vce) of 45V, a collector current (Ic) of 30mA, and a power dissipation of 300mW. The DC current gain (hFE) is a minimum of 100 at 10µA collector current and 5V Vce. The maximum Vce saturation voltage is 1V at 500µA base current and 10mA collector current.
The transistor is housed in a through-hole TO-206AA / TO-18-3 metal can package (supplier device package TO-18). It operates over a junction temperature range of -55°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.76 | $6.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) is 45V.
The maximum collector current (Ic) is 30mA.
The 2N930 is available in a through-hole TO-206AA / TO-18-3 metal can package (supplier device package TO-18).
The operating junction temperature range is -55°C to 200°C.
The 2N930 is listed as RoHS3 compliant, but this information is unverified and should be confirmed with the manufacturer.
The minimum DC current gain (hFE) is 100 at Ic=10µA and Vce=5V.
The power dissipation is 300mW.