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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Collector Base Cutoff Current (Maximum @ VCB = 25 V) | |
| Collector Base Cutoff Current (Maximum @ VCB = 25 V, TA = +150 °C) | |
| Collector Base Cutoff Current (Maximum @ VCB = 30 V) | |
| Collector Efficiency (Min) | |
| Collector-Base Time Constant (Max) | |
| Collector-Base Voltage (Max) | |
| Collector-Emitter Breakdown Voltage (Min) | |
| Collector-Emitter Voltage (Max) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current | |
| Emitter-Base Voltage (Max) | |
| Input Capacitance | |
| Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio | |
| Mounting Type | |
| Noise Figure (Max) | |
| Operating Temperature | |
| Oscillator Power Output (Min) | |
| Output Capacitance (Maximum @ VCB = 0 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz) | |
| Output Capacitance (Maximum @ VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz) | |
| Power | |
| Small-Signal Power Gain (Min) | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| dc_current_gain_hFE (Minimum @ IC = 10 mA, VCE = 10 V) | |
| dc_current_gain_hFE (Minimum @ IC = 3.0 mA, VCE = 1.0 V) | |
| dc_current_gain_hFE (Minimum @ IC = 3.0 mA, VCE = 1.0 V, TA = -55 °C) |
The 2N918 is an NPN low power silicon transistor manufactured by Microchip Technology. It is qualified per MIL-PRF-19500/301, ensuring reliability for military and aerospace applications. The device features a maximum collector-emitter voltage of 15V, collector-base voltage of 30V, and emitter-base voltage of 3V. Maximum collector current is 50mA, with a total power dissipation of 200mW at 25°C ambient temperature, derating linearly above 25°C.
Electrical characteristics include a minimum collector-emitter breakdown voltage of 15V at 3mA, and DC current gain (hFE) ranging from 10 to 200 depending on test conditions. The collector-emitter saturation voltage is 400mV maximum at 10mA collector current and 1mA base current. Dynamic characteristics include a magnitude of small-signal short-circuit forward current transfer ratio (|hfe|) of 6.0 to 18 at 100MHz, output capacitance as low as 1.7pF, and a noise figure of 6.0dB maximum at 60MHz.
The transistor is housed in a TO-206AF (TO-72-4) metal can package with through-hole mounting. It is suitable for low-power RF amplification and oscillator circuits up to VHF/UHF frequencies. The operating temperature range is -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $15.40 | $15.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15V.
TO-206AF (TO-72-4) metal can, through-hole.
-65°C to 200°C.
RoHS3 compliant (unverified).
Minimum 20 at 10mA/10V, range 10-200 at 0.5mA/10V.
200mW at 25°C ambient.