| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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143 pcs
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143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N915 from Raytheon is a silicon NPN bipolar junction transistor (BJT) suitable for military and high-reliability applications. It operates as a low-power, high-frequency device.
Key electrical characteristics include a collector-emitter breakdown voltage of 50V and a collector-base breakdown voltage of 70V. The maximum continuous collector current is 360mA, with a maximum power dissipation of 360mW. The current gain (hFE) ranges from 50 to 200 at a collector current of 10mA and a collector-emitter voltage of 5.0V. The transition frequency (fT) is a minimum of 100MHz at 10mA and 15V.
This transistor is housed in a TO-18 package and is designed for through-hole mounting. The maximum operating temperature is 200°C.
It is specified for applications requiring high-frequency amplification and switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 360mA.
The minimum collector-emitter breakdown voltage is 50V.
The 2N915 is in a TO-18 through-hole package.
The maximum operating junction temperature is 200°C.
The minimum transition frequency is 100MHz.
The DC current gain ranges from 50 to 200 at 10mA collector current and 5V collector-emitter voltage.