| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| SVHC Present |
The 2N915 is a silicon NPN bipolar junction transistor (BJT) from On Semiconductor, suitable for military and high-reliability applications. It offers a collector-emitter breakdown voltage of 50V and a collector-base breakdown voltage of 70V.
Key electrical characteristics include a maximum collector current of 360mA and a maximum power dissipation of 360mW. The current gain (hFE) ranges from a minimum of 50 to a maximum of 200 under specified test conditions. The transistor also features a minimum transition frequency of 100MHz.
With a maximum operating temperature of 200°C, the 2N915 is designed for demanding environments. It is housed in a TO-18 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2N915 is 360mA.
The maximum operating temperature for the 2N915 is 200°C.
The current gain (hFE) for the 2N915 ranges from 50 to 200.
The 2N915 transistor is supplied in a TO-18 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.