| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Mounting Type | |
| Operating Temperature | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N911 is an NPN small-signal bipolar junction transistor manufactured by Microchip Technology. It is designed for general-purpose amplification and switching applications.
Key electrical specifications include a collector-emitter breakdown voltage of 60V, a maximum power dissipation of 800mW, and a transition frequency of 50MHz. The DC current gain (hFE) is a minimum of 1000 at a collector current of 3A and Vce of 4V. The collector-emitter saturation voltage is a maximum of 1V at Ib=5mA and Ic=50mA.
The transistor is housed in a TO-206AA (TO-18-3 Metal Can) package with through-hole mounting. It operates over a junction temperature range of -65°C to 200°C. The device is RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 100+ | $28.55 | $28.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-206AA (TO-18-3 Metal Can) through-hole package.
-65°C to 200°C (junction).
Yes, it is RoHS3 compliant.
Minimum 1000 at Ic=3A, Vce=4V.
50 MHz.
800 mW.