| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12 pcs
|
12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The 2N877 is a single bipolar junction transistor (BJT) manufactured by GE. This component is designed for robust performance, featuring an RMS current capability ranging from 0.8 to 110 Amperes and a voltage rating between 15 and 1200 Volts. Its specifications make it suitable for power switching and amplification applications where high current and voltage handling are critical.
The transistor is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard handling procedures. Further details on specific electrical characteristics, package type, and operating conditions would typically be found in the manufacturer's datasheet.
This component falls under the category of Discrete Semiconductor Products, specifically within the Transistors - Bipolar (BJT) - Single subcategory. Its broad voltage and current ratings suggest versatility in various industrial and electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N877 transistor has an RMS current rating from 0.8 to 110 Amperes.
The 2N877 transistor operates between 15 and 1200 Volts.
Yes, the 2N877 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N877 is 1 Unlimited.