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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N720A is a silicon NPN transistor manufactured by Texas Instruments, designed for high-reliability applications. It features a maximum collector-emitter voltage (VCEO) of 80V and a maximum collector current (IC) of 500mA.
This transistor is housed in a TO-18 package, suitable for through-hole mounting. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 20 to 120 depending on the operating conditions, and a collector emitter saturation voltage (VCE(sat)) of up to 5V.
The operating junction and storage temperature range is -65°C to +200°C, indicating robust thermal performance. Dynamic characteristics include a magnitude of common emitter small signal forward current transfer ratio ( |hfe| ) of at least 3.0 at 20MHz.
Available options include high-reliability versions and RoHS-compliant variants. The 2N720A is suitable for a wide range of general-purpose amplification and switching applications where reliable performance is critical.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2N720A transistor is 80V.
The maximum collector current (IC) for the 2N720A transistor is 500mA.
The operating junction and storage temperature range for the 2N720A transistor is -65°C to +200°C.
The 2N720A transistor is supplied in a TO-18 package.
The forward current transfer ratio (hFE) of the 2N720A at IC = 10mA and VCE = 10V ranges from 40 to 120.