| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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92 pcs
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92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N720A is a silicon planar epitaxial NPN transistor manufactured by STMicroelectronics. It is designed for high-voltage general-purpose applications, offering a collector-base voltage of 120V, a collector-emitter voltage of 80V, and a collector current of 500mA. The device provides a DC current gain (hFE) of at least 40 at 150mA and 10V, with a maximum collector-emitter saturation voltage of 5V at 150mA.
This transistor is suitable for a wide variety of amplifier and switching applications. It features a maximum power dissipation of 500mW at ambient temperature and 1.8W at case temperature, with a maximum junction temperature of 175°C. The device is housed in a TO-18 metal can package (TO-206AA) with through-hole mounting, ensuring robust mechanical and thermal performance.
With its high voltage rating and moderate current capability, the 2N720A is well-suited for general-purpose amplification, signal switching, and driver circuits in industrial and consumer electronics. Its TO-18 package provides reliable heat dissipation and is compatible with standard through-hole PCB assembly processes.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The maximum collector current is 500mA.
The 2N720A is available in a TO-18 metal can package (TO-206AA).
The maximum power dissipation is 500mW at ambient temperature (25°C) and 1.8W at case temperature (25°C).
The maximum operating junction temperature is 175°C, and the storage temperature range is -55°C to 175°C.
The minimum DC current gain is 20 at 100µA, 35 at 10mA, and 40 at 150mA (all at VCE=10V).
The maximum collector-base voltage (VCBO) is 120V.