Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cutoff Current (ICBO @ VCB) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Capacitance (CCBO @ VCB,f) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current (IEBO @ VEB) | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Capacitance (CEBO @ VEB,f) | |
| Max Operating Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| P Tot (Maximum @ Tc <=25 °C) | |
| Power | |
| Small Signal Current Gain (hfe @ Ic,Vce,f) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance (Junction-Ambient) | |
| Thermal Resistance Junction-Case | |
| Transistor Type | |
| Vce Sat (Maximum @ IC=150 mA, IB=15 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) | |
| hfe (Minimum @ IC=100 µA, VCE=10 V) | |
| hfe (Minimum/Maximum @ IC=150 mA, VCE=10 V) |
The 2N720A is a high-voltage NPN bipolar junction transistor manufactured by Microchip Technology. It is housed in a through-hole TO-18 (TO-206AA) metal can package, suitable for a wide range of amplifier and switching applications. The device offers a collector-emitter breakdown voltage (V(BR)CEO) of 80V minimum and a collector-base breakdown voltage of 120V minimum, with a maximum collector current of 500mA. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 120 at IC=150mA and VCE=10V, and a collector-emitter saturation voltage as low as 1.2V at IC=50mA. The transistor can dissipate up to 500mW at ambient temperature and 1.8W at case temperature, with a maximum junction temperature of 175°C. Its small signal current gain at 20MHz is a minimum of 2.5. The 2N720A is designed for general-purpose amplification and switching, and its metal can package provides good thermal performance. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $7.76 | $7.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (V(BR)CEO) is 80V minimum, collector-base (V(BR)CBO) is 120V minimum, and emitter-base (V(BR)EBO) is 7V minimum.
The 2N720A is available in a TO-18 (TO-206AA) metal can package, through-hole mounting.
The maximum junction temperature is 175°C, storage temperature range is -55°C to 175°C, and operating junction temperature range is -65°C to 200°C.
The device is marked as RoHS3 compliant, but this status is unverified and conflicts with distributor data. Verify with manufacturer.
The maximum collector current (IC) is 500 mA.
The DC current gain (hFE) is minimum 40 to maximum 120 at IC=150mA and VCE=10V.
The collector-emitter saturation voltage (VCE(sat)) is 1.2V maximum at IC=50mA, IB=5mA, and 5V maximum at IC=150mA, IB=15mA.