| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21 pcs
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21 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Central Semiconductor 2N706A is a silicon epitaxial planar NPN transistor specifically engineered for high-speed saturated switching applications. This device offers a collector-base voltage of 25V and a collector-emitter voltage (VCEO) of 15V, with a maximum continuous collector current of 50mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 20 to 60 at 10mA, and a transition frequency (fT) of 200MHz. The transistor also exhibits a low output capacitance (Cob) of 5pF and fast switching times, with turn-on time at 40ns, turn-off time at 75ns, and storage time at 25ns.
Designed for through-hole mounting, the 2N706A comes in a TO-18 case. Its operating and storage junction temperature range is from -65°C to +200°C. Power dissipation is rated at 0.3W at 25°C ambient temperature and up to 1.0W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-base voltage (VCBO) for the 2N706A is 25V.
The maximum continuous collector current (IC) for the 2N706A is 50mA.
The transition frequency (fT) of the 2N706A is 200MHz at 15V collector-emitter voltage and 10mA emitter current.
The operating and storage junction temperature range for the 2N706A is -65°C to +200°C.
The 2N706A transistor is supplied in a TO-18 case.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2N706A is 1 Unlimited.