| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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51 pcs
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51 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Central Semiconductor 2N706A is a silicon epitaxial planar NPN transistor engineered for high-speed saturated switching applications. This component features a Collector-Base Voltage (VCBO) of 25V and a Collector-Emitter Voltage (VCEO) of 15V, making it suitable for various switching tasks.
With a Continuous Collector Current (IC) rating of 50mA and a maximum Power Dissipation of 0.3W at 25°C ambient temperature, the 2N706A is designed for moderate power applications. Its operating and storage junction temperature range is from -65°C to +200°C.
Electrical characteristics include a DC Current Gain (hFE) ranging from 20 to 60 at IC=10mA and VCE=1.0V. The transition frequency (fT) is 200MHz at VCE=15V and IE=10mA. Switching times are also specified, with a turn-on time of 40ns and a turn-off time of 75ns.
The 2N706A is housed in a TO-18 case and is designed for through-hole mounting. Its lead code designates Emitter, Base, and Collector.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the 2N706A is 25V.
The maximum Continuous Collector Current (IC) for the 2N706A is 50mA.
The operating and storage junction temperature range is -65°C to +200°C.
The 2N706A is supplied in a TO-18 case.