| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The CENTRAL SEMICONDUCTOR 2N706A is a silicon epitaxial planar NPN transistor designed for high-speed saturated switching applications.
Key electrical specifications include a Collector-Base Voltage (VCBO) of 25V, a Collector-Emitter Voltage (VCEO) of 15V, and a Continuous Collector Current (IC) of 50mA. The device operates within a junction temperature range of -65 to +200°C.
Thermal characteristics include a Power Dissipation of 0.3W at TA=25°C and 1.0W at TC=25°C. Thermal resistance is 500°C/W for Junction-to-Ambient (ΘJA) and 150°C/W for Junction-to-Case (ΘJC).
This transistor is housed in a TO-18 case. It is suitable for applications requiring fast switching speeds in saturated conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Base Voltage (VCBO) for the 2N706A is 25V.
The maximum Continuous Collector Current (IC) for the 2N706A is 50mA.
The operating and storage junction temperature range for the 2N706A is -65 to +200°C.
The 2N706A is available in a TO-18 case.
The transition frequency (fT) of the 2N706A is a minimum of 200MHz.
The turn-on time (ton) is a maximum of 40ns and the turn-off time (toff) is a maximum of 75ns.