| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
132 pcs
|
132 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Central Semiconductor 2N706A is a silicon epitaxial planar NPN transistor engineered for high-speed saturated switching applications. This component is housed in a TO-18 case, a common package for discrete transistors.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 25V and a maximum collector-emitter voltage (VCEO) of 15V. The continuous collector current (IC) is rated at 50mA. The transistor offers a DC current gain (hFE) ranging from 20 to 60 at a collector current of 10mA and a collector-emitter voltage of 1.0V. Its transition frequency (fT) reaches a minimum of 200MHz under specific test conditions.
Thermal performance is managed with a power dissipation rating of 0.3W at an ambient temperature of 25°C and 1.0W at a case temperature of 25°C. The operating and storage junction temperature range is from -65°C to +200°C. Thermal resistance from junction to ambient (ΘJA) is 500°C/W, and from junction to case (ΘJC) is 150°C/W.
Switching characteristics are defined by turn-on time (ton) of 40ns, turn-off time (toff) of 75ns, and storage time (ts) of 25ns, making it suitable for applications requiring rapid switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
15V.
TO-18.
-65°C to +200°C.
20 to 60 at VCE=1V, IC=10mA.
Minimum 200MHz.
0.3W.
0.6V maximum at IC=10mA, IB=1mA.