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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,160 pcs
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5160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N7052 is an NPN Darlington transistor manufactured by On Semiconductor. It features a collector-emitter voltage (Vceo) of 100V and a collector current (Ic) rating of 1.5A, making it suitable for medium-power switching and amplification applications.
With a minimum DC current gain (hFE) of 1000 at 1A collector current and 5V Vce, this Darlington configuration provides high current gain, reducing the drive current required from the control circuit. The maximum Vce saturation voltage is 1.5V at 100mA collector current with 100µA base current.
The device has a power dissipation rating of 625mW and a transition frequency of 200MHz. It is designed for through-hole mounting in a TO-226-3, TO-92-3 (TO-226AA) package, with a supplier device package of TO-92-3. The operating junction temperature range is -55°C to 150°C.
The 2N7052 has a collector-emitter voltage (Vceo) of 100V.
The maximum collector current (Ic) is 1.5A.
The power dissipation (Pd) is 625mW.
The 2N7052 is available in a TO-226-3, TO-92-3 (TO-226AA) through-hole package, with a supplier device package of TO-92-3.
The operating junction temperature range is -55°C to 150°C.
The 2N7052 is listed as RoHS3 compliant, though this is unverified.
The minimum DC current gain (hFE) is 1000 at Ic = 1A and Vce = 5V.