| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N7008 is a small-signal N-channel enhancement mode MOSFET manufactured by onsemi (formerly ON Semiconductor). It features a drain-to-source voltage rating of 60V and a continuous drain current of 150mA at 25°C, with a pulsed drain current capability of 1000mA. The device has a maximum on-resistance of 7.5 Ohms when driven at 5V and 50mA, and 13.5 Ohms at 10V and 500mA.
This MOSFET is designed for high-voltage, high-speed switching applications such as switching regulators, converters, solenoid drivers, and relay drivers. It offers fast switching speeds with a typical turn-on delay of 20ns and turn-off delay of 20ns. The gate threshold voltage is not specified in the datasheet, but the device can be driven with 5V or 10V logic levels.
The 2N7008 is packaged in a through-hole TO-92 (TO-226) package, which is automatic insertable and available in radial tape and reel or ammo pack formats. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 400mW at 25°C. It is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current is 150mA at 25°C ambient temperature.
The 2N7008 is available in a through-hole TO-92 (TO-226) package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this status is unverified and has low confidence.
The maximum static drain-to-source on-resistance is 7.5 Ohms at Vgs=5V and Id=50mA.
The maximum power dissipation is 400mW at 25°C ambient temperature.