2N7002WT1G 2N7002WT1G is an N-Channel MOSFET from On Semiconductor, rated for 60V drain-source voltage and 310mA continuous drain current. It is housed in a surface-mount SC-70-3 package.
Mfr Part #:

2N7002WT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N7002WT1G is an N-Channel MOSFET from On Semiconductor, rated for 60V drain-source voltage and 310mA continuous drain current. It is housed in a surface-mount SC-70-3 package.
✓ Total Stock: 1,372,305 pcs
$ Price Range: $0.04 - $0.20

2N7002WT1G Available from 8 distributors

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✓ Non-Authorised

2N7002WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002WT1G Description

Short technical summary and product information.

The 2N7002WT1G is a small-signal N-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage of 60V and a continuous drain current of 310mA at 25°C ambient temperature. The device has a low on-resistance of 1.6Ω at Vgs=10V, making it suitable for low-power switching applications.

 

This MOSFET is designed for surface-mount assembly and is available in the compact SC-70-3 (SOT-323) package. It offers ESD protection up to 2000V (HBM) and operates over a junction temperature range of -55°C to 150°C. The part is Pb-free, halogen-free, and RoHS compliant.

 

Typical applications include low-side load switches, level shift circuits, DC-DC converters, and portable electronics such as digital cameras, PDAs, and cell phones. The device also has an automotive-grade variant (2V7002WT1G) for applications requiring AEC-Q101 qualification.

2N7002WT1G Quick Information

Product Type: MOSFET
Canonical Name: 2N7002WT1G - N-Channel MOSFET, 60V, 310mA, SC-70-3
Subcategory: Small Signal MOSFET

2N7002WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002WT1G Estimated Pricing

Qty Low High
1+ $0.20 $0.20
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002WT1G Features

  • N-Channel MOSFET for low-power switching.
  • Rated for 60V drain-source voltage.
  • Continuous drain current of 310mA.
  • Low on-resistance of 1.6Ω at 10V.
  • Surface mount SC-70-3 package.

2N7002WT1G Applications

  • Low-side load switch applications.
  • Level shift circuits in mixed-voltage designs.
  • DC-DC converter power stages.
  • Portable electronics like cell phones.

2N7002WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the 2N7002WT1G?

The maximum drain-source voltage is 60V.

What is the maximum continuous drain current?

The continuous drain current is 310mA at 25°C ambient temperature (steady state) and 340mA for t < 5s.

What is the package type of the 2N7002WT1G?

The device is available in an SC-70-3 (SOT-323) surface-mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the 2N7002WT1G RoHS compliant?

Yes, the device is RoHS3 compliant, Pb-free, and halogen-free.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2.5V at a drain current of 250µA.

What is the drain-source on-resistance?

The maximum on-resistance is 1.6Ω at Vgs=10V and Id=500mA.

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