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2N7002W-7-F N-channel enhancement mode MOSFET with 60V drain-source breakdown voltage and 115mA continuous drain current. Housed in a SOT-323 surface mount package.
Mfr Part #:

2N7002W-7-F

Available from 8 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-channel enhancement mode MOSFET with 60V drain-source breakdown voltage and 115mA continuous drain current. Housed in a SOT-323 surface mount package.
✓ Total Stock: 4,764,177 pcs
$ Price Range: $0.04 - $0.23

2N7002W-7-F Available from 8 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N7002W-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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2N7002W-7-F Description

Short technical summary and product information.

The 2N7002W-7-F is an N-channel enhancement mode field effect transistor from Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 115mA at +25°C ambient temperature. The on-state resistance (RDS(ON)) is 7.5Ω maximum at VGS = 5V, designed to minimize conduction losses while maintaining fast switching performance.

 

This MOSFET is suitable for high-efficiency power management applications including motor control and general power management functions. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed. The device also features low input/output leakage.

 

The 2N7002W-7-F is packaged in an ultra-small SOT-323 surface mount package with molded plastic case material rated UL 94V-0. It is moisture sensitivity level 1 per J-STD-020D and has matte tin annealed terminals over Alloy 42 leadframe, solderable per MIL-STD-202 Method 208. The part is fully RoHS compliant, lead-free, halogen and antimony free, and is a green device.

2N7002W-7-F Quick Information

Product Type: N-Channel Enhancement Mode MOSFET
Canonical Name: 2N7002W-7-F N-Channel Enhancement Mode Field Effect Transistor
Subcategory: Single MOSFETs

2N7002W-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002W-7-F Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.08 $0.08
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002W-7-F Features

  • 60V drain-source breakdown voltage.
  • 115mA continuous drain current rating.
  • 7.5Ω on-resistance at 5V gate drive.
  • Ultra-small SOT-323 surface mount package.
  • RoHS compliant and halogen free.

2N7002W-7-F Applications

  • Motor control applications.
  • Power management functions.
  • High-efficiency power management circuits.

2N7002W-7-F FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7002W-7-F?

The maximum drain-source voltage (BVDSS) is 60V.

What is the maximum continuous drain current of the 2N7002W-7-F?

The maximum continuous drain current (ID) is 115mA at +25°C ambient temperature.

What is the on-resistance of the 2N7002W-7-F?

The on-resistance (RDS(ON)) is 7.5Ω maximum at VGS = 5V.

What package does the 2N7002W-7-F come in?

It comes in an SOT-323 surface mount package.

Is the 2N7002W-7-F RoHS compliant?

Yes, it is fully RoHS compliant, lead-free, halogen and antimony free, and a green device.

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