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2N7002W-7 N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 115mA continuous drain current with low on-resistance of 7.5Ω.
Mfr Part #:

2N7002W-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 115mA continuous drain current with low on-resistance of 7.5Ω.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.15

2N7002W-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
12,000 pcs
On Request
12000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

2N7002W-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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2N7002W-7 Description

Short technical summary and product information.

The 2N7002W-7 is an N-channel enhancement mode field effect transistor designed for low-power switching applications. It features a maximum drain-source voltage of 60V and continuous drain current of 115mA at 25°C ambient temperature. The device offers low on-state resistance of 7.5Ω at Vgs=5V and Id=50mA, ensuring efficient power management. With low gate threshold voltage (2V max at 250µA) and low input capacitance (50pF at Vds=25V), it is suitable for high-speed switching. The MOSFET is housed in a compact SOT-323 surface mount package, weighing only 0.006 grams. It is fully RoHS compliant and halogen-free, making it environmentally friendly. Typical applications include motor control, power management functions, and general purpose switching.

2N7002W-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: 2N7002W-7 N-Channel MOSFET
Subcategory: N-Channel MOSFET

2N7002W-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002W-7 Estimated Pricing

Qty Low High
30,000+ $0.15 $0.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002W-7 Features

  • N-Channel enhancement mode MOSFET.
  • Maximum drain-source voltage of 60V.
  • Continuous drain current up to 115mA.
  • Low on-resistance of 7.5Ω at 5V gate drive.
  • Compact SOT-323 surface mount package.

2N7002W-7 Applications

  • Motor control applications.
  • Power management functions.
  • General purpose low-power switching.
  • High-speed switching circuits.

2N7002W-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7002W-7?

60V.

What package does the 2N7002W-7 come in?

SOT-323 (SC-70 compatible).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the 2N7002W-7 RoHS compliant?

Yes, it is fully RoHS3 compliant and lead-free.

What is the gate threshold voltage?

Maximum 2V at 250µA drain current.

What is the on-state resistance?

Maximum 7.5Ω at Vgs=5V and Id=50mA.

What is the input capacitance?

Maximum 50pF at Vds=25V.

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