| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,396 pcs
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2396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PANJIT 2N7002W is a versatile N-Channel MOSFET suitable for a wide range of electronic applications. It offers a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 20A, making it robust for various power switching tasks.
This MOSFET is housed in a compact SOT-23 surface-mount package, facilitating easy integration into printed circuit boards and enabling space-saving designs. Its electrical characteristics include a typical input capacitance (Ciss) of 35pF and a gate threshold voltage (Vgs(th)) of 2.5V maximum. The on-resistance (Rds(on)) is specified at 115mOhm maximum under various test conditions, ensuring efficient operation.
Designed for reliability, the 2N7002W is suitable for applications requiring stable performance in moderate power environments. Its specifications make it a good choice for general-purpose switching, amplification, and signal control circuits where a dependable MOSFET is needed.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the 2N7002W is 60V.
The continuous drain current (Id) for the 2N7002W is 20A.
The on-resistance (Rds(on)) for the 2N7002W is a maximum of 115mOhm.
The 2N7002W is available in the SOT-23 package.
The maximum gate threshold voltage (Vgs(th)) for the 2N7002W is 2.5V.
The typical input capacitance (Ciss) of the 2N7002W is 35pF.