| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The 2N7002VA is a dual N-channel MOSFET array from On Semiconductor. It consists of two independent N-channel MOSFETs with a drain-source voltage rating of 60V and a continuous drain current of 280mA. The device features a logic level gate, enabling direct drive from low-voltage logic signals. The maximum drain-source on-resistance is 7.5 Ohm at Vgs=5V and Id=50mA. The gate threshold voltage is 2.5V maximum at Id=250µA. The input capacitance is typically 50 pF at Vds=25V. The maximum power dissipation is 250mW. The MOSFETs are housed in a compact SOT-563F package, which is also compatible with SOT-563 and SOT-666 footprints. The operating temperature range is -55°C to 150°C. The device is surface mountable, making it suitable for space-constrained applications. The dual configuration provides design flexibility for switching and load control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
| 10+ | $0.74 | $0.74 |
| 100+ | $0.48 | $0.48 |
| 500+ | $0.38 | $0.38 |
| 1,000+ | $0.34 | $0.34 |
| 3,000+ | $0.34 | $0.34 |
| 6,000+ | $0.32 | $0.32 |
| 9,000+ | $0.31 | $0.31 |
| 24,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
SOT-563, SOT-666, and SOT-563F.
-55°C to 150°C.
RoHS3 compliant (unverified).
7.5 Ohm at Vgs=5V, Id=50mA.
2.5 V maximum at Id=250µA.
2 N-Channel (Dual).