| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7002T is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of 300mA (115mA at ambient temperature). The device utilizes MOSFET (Metal Oxide) technology and is designed for low-power switching applications.
Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 2V at Id=250µA, and an on-resistance (Rds(on)) as low as 0.9 Ohm typical at Vgs=10V, Id=500mA. Maximum Rds(on) is 3 Ohm at Vgs=5V, Id=50mA. Input capacitance is 50pF typical at Vds=25V, 1MHz. Power dissipation is rated at 150mW (max) from the datasheet, with a maximum junction temperature of 150°C.
The device is offered in a surface-mount SOT-523F package, which is also referenced as SC-89 or SOT-490. It is suitable for compact designs requiring low power consumption and small footprint. Compliance with RoHS, REACH, and MSL Level 1 is indicated but unverified.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60 V.
Maximum continuous drain current is 300 mA; ambient temperature (Ta) rating is 115 mA.
The device is available in SC-89, SOT-490 packages, with supplier device package SOT-523F.
The maximum junction temperature is 150°C.
RoHS3 Compliant (status unverified).
The maximum gate threshold voltage (Vgs(th)) is 2 V at Id = 250 µA.
Maximum on-resistance (Rds(on)) is 7.5 Ohm at Id = 50 mA, Vgs = 5 V.